About this role
Design and optimize GaN epitaxial structures and MOCVD recipes to meet device performance targets. Transition these processes from R&D into high-volume manufacturing while providing strategic technical leadership and mentorship.
Requires a Master's or PhD in Materials Science, Physics, or Engineering with 7 to 15+ years of semiconductor R&D experience. Must possess deep expertise in MOCVD reactors and a proven track record of scaling epitaxial processes to high-volume manufacturing.
What they're looking for
GaN EpitaxyMOCVDIII-V Hetero-epitaxyDesign of Experiments (DOE)Statistical Process Control (SPC)SEMTEMAFM
Frequently asked questions
What does a Principal Engineer - GaN Epitaxy Development at Infineon do?
Design and optimize GaN epitaxial structures and MOCVD recipes to meet device performance targets. Transition these processes from R&D into high-volume manufacturing while providing strategic technical leadership and mentorship. Requires a Master's or PhD in Materials Science, Physics, or Engineerin…
What skills does this Principal Engineer - GaN Epitaxy Development role need?
Key skills for this role include GaN Epitaxy, MOCVD, III-V Hetero-epitaxy, Design of Experiments (DOE), Statistical Process Control (SPC), SEM.
How much does a Principal Engineer - GaN Epitaxy Development at Infineon pay?
The employer did not list a salary for this role. Most similar Singapore roles publish their band on the job page.
Is this Principal Engineer - GaN Epitaxy Development role remote, hybrid, or on-site?
This role is on-site, based in Singapore.
How do I apply for this Principal Engineer - GaN Epitaxy Development role?
You can apply directly on Infineon's careers page. ApplyLah can tailor your résumé and cover letter to this exact role in seconds first.